? 2009 ixys corporation, all rights reserved high voltage igbt IXGH10N300 v ces = 3000v i c90 = 10a v ce(sat) 3.5v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified min. typ. max. bv ces i c = 250 a, v ge = 0v 3000 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces, v ge = 0v 25 a t j = 125 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 10a, v ge = 15v 3.5 v i c = 30a 5.2 v symbol test conditions maximum ratings v ces t j = 25c to 150c 3000 v v cgr t j = 25c to 150c, r ge = 1m 3000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 18 a i c90 t c = 90c 10 a i cm t c = 25c, 1ms 40 a ssoa v ge = 20v, t vj = 125c, r g = 50 i cm = 32 a (rbsoa) clamped inductive load @ 1250 v p c t c = 25c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g ds100151(05/09) for capacitor discharge applications features high peak current capability low saturation voltage low gate drive requirement molding epoxies meet ul 94 v-0 flammability classification applications capacitor discharge pulser circuits advantages high power density easy to mount advance technical information g = gate c = collector e = emitter tab = collector to-247 ad (tab) g c e
ixys reserves the right to change limits, test conditions, and dimensions. IXGH10N300 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 20a, v ce = 10v, note 1 3.6 6.0 s i c(on) v ge = 15v, v ce = 15v, note 1 54 a c ies 560 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 24 pf c res 8 pf q g(on) 32.0 nc q ge i c = 10a, v ge = 15v, v ce = 0.5 ? v ces 7.5 nc q gc 12.0 nc t d(on) 72 ns t r 227 ns t d(off) 154 ns t f 530 ns r thjc 1.25 c/w r thck 0.21 c/w ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s; duty cycle, d 2%. 2. additional provisions for lead-to-lead voltage isolation are required at v ce > 1200v. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. resistive switching times i c = 20a, v ge = 15v v ce = 1250v, r g = 50
? 2009 ixys corporation, all rights reserved IXGH10N300 fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 v ce - volts i c - amperes 10v 15v 5v v ge = 25v 20v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v ce - volts i c - amperes v ge = 25v 20v 15v 5v 10v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50-25 0 255075100125150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 20a i c = 5a i c = 10a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 7 9 11 13 15 17 19 21 23 25 v ge - volts v ce - volts v ge = 15v 5a 10a i c = 20a fig. 6. input admittance 0 5 10 15 20 25 30 35 40 34567891011121314 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH10N300 fig. 11. maximum transient thermal impedance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z ( t h ) jc - oc / w fig. 11. maximum transient thermal impedance fig. 7. transconductance 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 40 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 q g - nanocoulombs v ge - volts v ce = 950v i c = 10a i g = 10ma fig. 9. reverse-bias safe operating area 0 5 10 15 20 25 30 35 200 600 1000 1400 1800 2200 2600 3000 v ce - volts i c - amperes t j = 125oc r g = 50 ? dv / dt < 10v / ns fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved ixys ref: g_10n300(3p)5-05-09 fig. 12. resistive turn-on rise time vs. junction temperature 80 120 160 200 240 280 320 360 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 50 ? v ge = 15v v ce = 1250v i c = 40a i c = 20a fig. 13. resistive turn-on rise time vs. collector current 40 80 120 160 200 240 280 320 10 15 20 25 30 35 40 i c - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 50 ? v ge = 15v v ce = 1250v fig. 16. resistive turn-off switching times vs. collector current 0 200 400 600 800 1000 1200 1400 10 15 20 25 30 35 40 i c - amperes t f - nanoseconds 80 100 120 140 160 180 200 220 t d(off) - nanoseconds t j = 25oc, 125oc t f t d(off ) - - - - r g = 50 ? , v ge = 15v v ce = 1250v fig. 14. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 900 1,000 50 100 150 200 250 300 r g - ohms t r - nanoseconds 0 50 100 150 200 250 300 350 400 450 500 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 40a i c = 20a fig. 15. resistive turn-off switching times vs. junction temperature 100 200 300 400 500 600 700 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 80 100 120 140 160 180 200 t d(off) - nanoseconds t f t d(off ) - - - - r g = 50 ? , v ge = 15v v ce = 1250v i c = 20a i c = 40a fig. 17. resistive turn-off switching times vs. gate resistance 100 200 300 400 500 600 700 50 100 150 200 250 300 r g - ohms t f - nanoseconds 50 150 250 350 450 550 650 t d(off) - nanoseconds i c = 20a t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 40a IXGH10N300
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